ATOMIC LAYER DEPOSITION OF ALUMINUM-MOLYBDENUM OXIDE FILMS USING TRIMETHYLALUMINUM AND MOLYBDENUM DICHLORIDE DIOXIDE

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An atomic layer deposition (ALD) of aluminum-molybdenum oxide (Al,Mo,O) films, based on cyclic reactions of trimethylaluminum (TMA) and molybdenum dichloride dioxide (MoO2Cl2) vapors, is presented. The effect of adding a water vapor dose into the ALD cycle (TMA-H2O-MoO2Cl2) was investigated. The film growth process was studied in situ using a quartz crystal microbalance (QCM). It was established that at a deposition temperature of 180°C, both the TMA-MoO2Cl2 and TMA-H2O-MoO2Cl2 processes exhibit linear growth with growth per cycle (GPC) values of 3.79 Å/cycle and 3.94 Å/cycle, respectively. According to X-ray reflectivity (XRR) and X-ray diffraction (XRD) data, the resulting films had an amorphous structure with a density of ∼3.7 g/cm3 and a root mean square (RMS) roughness in the range of 10-12 Å. Both types of films had a similar composition. The films contained Mo6+, Mo5+, and Mo4+ species.

Sobre autores

A. Maksumova

Dagestan State University; Institute for Geothermal Research and Renewable Energy of the Joint Institute for High Temperatures of the Russian Academy of Sciences

Email: ilmutdina@gmail.com
Makhachkala, Russia; Makhachkala, Russia

I. Bodalev

St. Petersburg State Technological Institute (Technical University)

St. Petersburg, Russia

S. Etmisheva

Dagestan State University

Makhachkala, Russia

A. Koroleva

St. Petersburg State University

St. Petersburg, Russia

M. Shtancheva

Dagestan State University

Makhachkala, Russia

I. Abdulagatov

Dagestan State University

Makhachkala, Russia

M. Rabadanov

Dagestan State University

Makhachkala, Russia

A. Loginova

PROTON Plant

Zelenograd, Moscow, Russia

B. Loginov

National Research University “Moscow Institute of Electronic Technology”

Moscow, Russia

A. Abdulagatov

Dagestan State University

Makhachkala, Russia

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