| Шығарылым |
Атауы |
Файл |
| Том 51, № 11 (2017) |
Contactless characterization of manganese and carbon delta-layers in gallium arsenide |
(Eng)
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Komkov O., Kudrin A.
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| Том 51, № 11 (2017) |
Cyclotron resonance features in a three-dimensional topological insulators |
(Eng)
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Turkevich R., Demikhovskii V., Protogenov A.
|
| Том 51, № 11 (2017) |
Inhomogeneous dopant distribution in III–V nanowires |
(Eng)
|
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Leshchenko E., Dubrovskii V.
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| Том 51, № 11 (2017) |
Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures |
(Eng)
|
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Fateev D., Mashinsky K., Qin H., Sun J., Popov V.
|
| Том 51, № 11 (2017) |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
(Eng)
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Kulagina M., Kuzmenkov A., Nevedomskii V., Guseva Y., Maleev S., Ladenkov I., Fefelova E., Fefelov A., Ustinov V., Maleev N., Belyakov V., Vasil’ev A., Bobrov M., Blokhin S.
|
| Том 51, № 11 (2017) |
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator |
(Eng)
|
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Khomitsky D., Lavrukhina E., Chubanov A., Njiya N.
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| Том 51, № 11 (2017) |
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects |
(Eng)
|
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Zabavichev I., Obolenskaya E., Potekhin A., Puzanov A., Obolensky S., Kozlov V.
|
| Том 51, № 11 (2017) |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
(Eng)
|
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Nikiforov V., Abramkin D., Shamirzaev T.
|
| Том 51, № 11 (2017) |
Optimization of the superlattice parameters for THz diodes |
(Eng)
|
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Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E., Obolensky S., Ustinov V.
|
| Том 51, № 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
(Eng)
|
|
Akimov A., Klimov A., Suprun S., Epov V.
|
| Том 51, № 11 (2017) |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
(Eng)
|
|
Aleshkin V., Gavrilenko L.
|
| Том 51, № 11 (2017) |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
(Eng)
|
|
Akimov A., Klimov A., Paschin N., Yaroshevich A., Savchenko M., Epov V., Fedosenko E.
|
| Том 51, № 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
(Eng)
|
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Okhapkin A., Korolyov S., Yunin P., Drozdov M., Kraev S., Khrykin O., Shashkin V.
|
| Том 51, № 11 (2017) |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
(Eng)
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Baidus N., Aleshkin V., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Pavlov D., Rykov A., Sushkov A., Shaleev M., Yunin P., Yurasov D., Yablonskiy A., Krasilnik Z.
|
| Том 51, № 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
(Eng)
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Alexeev A., Mamaev V., Petrov S.
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| Нәтижелер 40 - 26/40 |
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