| Шығарылым |
Атауы |
Файл |
| Том 50, № 3 (2016) |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
(Eng)
|
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Orletsky I., Ilashchuk M., Brus V., Marianchuk P., Solovan M., Kovalyuk Z.
|
| Том 50, № 3 (2016) |
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy |
(Eng)
|
|
Pchelyakov O., Mikhlin Y., Parshin A., Kushchenkov S.
|
| Том 50, № 3 (2016) |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
(Eng)
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|
Detochenko A., Denisov S., Drozdov M., Mashin A., Gavva V., Bulanov A., Nezhdanov A., Ezhevskii A., Stepikhova M., Chalkov V., Trushin V., Shengurov D., Shengurov V., Abrosimov N., Riemann H.
|
| Том 50, № 3 (2016) |
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation |
(Eng)
|
|
Popov V.
|
| Том 50, № 2 (2016) |
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates |
(Eng)
|
|
Khabibullin R., Yachmenev A., Lavrukhin D., Ponomarev D., Bugayev A., Maltsev P.
|
| Том 50, № 2 (2016) |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
(Eng)
|
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Aleksandrov I., Zhuravlev K., Mansurov V.
|
| Том 50, № 2 (2016) |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
(Eng)
|
|
Galiev G., Klimov E., Grekhov M., Pushkarev S., Lavrukhin D., Maltsev P.
|
| Том 50, № 2 (2016) |
GaAs structures with a gate dielectric based on aluminum-oxide layers |
(Eng)
|
|
Kalentyeva I., Vikhrova O., Zdoroveyshchev A., Danilov Y., Kudrin A.
|
| Том 50, № 2 (2016) |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
(Eng)
|
|
Mynbaev K., Zablotsky S., Shilyaev A., Bazhenov N., Yakushev M., Marin D., Varavin V., Dvoretsky S.
|
| Том 50, № 1 (2016) |
Vertical heterostructures based on graphene and other 2D materials |
(Eng)
|
|
Antonova I.
|
| Том 50, № 1 (2016) |
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry |
(Eng)
|
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Makeev M., Ivanov Y., Meshkov S.
|
| Том 50, № 1 (2016) |
On controlling the electronic states of shallow donors using a finite-size metal gate |
(Eng)
|
|
Levchuk E., Makarenko L.
|
| Нәтижелер 162 - 151/162 |
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