| 期 |
栏目 |
标题 |
文件 |
| 卷 51, 编号 5 (2017) |
Surfaces, Interfaces, and Thin Films |
Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium |
|
| 卷 51, 编号 5 (2017) |
Physics of Semiconductor Devices |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
| 卷 52, 编号 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy |
|
| 卷 52, 编号 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots |
|
| 卷 52, 编号 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
|
| 卷 52, 编号 13 (2018) |
Physics of Semiconductor Devices |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
|
| 卷 52, 编号 14 (2018) |
Lasers and Optoelectronic Devices |
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks |
|
| 卷 53, 编号 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
|
| 卷 53, 编号 12 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
|
| 卷 53, 编号 12 (2019) |
Physics of Semiconductor Devices |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
|
