作者的详细信息
Shubina, K. Yu.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy | |
| 卷 52, 编号 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications | |
| 卷 53, 编号 12 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |