Informaçao sobre o Autor
Matveev, S. A.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |