Comparison of flash-memory elements using materials based on graphene
- Autores: Antonova I.V.1,2,3, Kotin I.A.1, Orlov O.M.4, Devyatova S.F.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Scientific and Research Institute of Molecular Electronics
- Edição: Volume 43, Nº 10 (2017)
- Páginas: 889-892
- Seção: Article
- URL: https://medbiosci.ru/1063-7850/article/view/206137
- DOI: https://doi.org/10.1134/S1063785017100029
- ID: 206137
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Resumo
Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.
Sobre autores
I. Antonova
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Autor responsável pela correspondência
Email: antonova@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
I. Kotin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antonova@isp.nsc.ru
Rússia, Novosibirsk, 630090
O. Orlov
Scientific and Research Institute of Molecular Electronics
Email: antonova@isp.nsc.ru
Rússia, Moscow, 124460
S. Devyatova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antonova@isp.nsc.ru
Rússia, Novosibirsk, 630090
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