Luminescence of solar cells with a-Si:H/c-Si heterojunctions
- Авторлар: Zhigunov D.M.1, Il’in A.S.1,2, Forsh P.A.1,2, Bobyl’ A.V.3, Verbitskii V.N.3, Terukov E.I.3, Kashkarov P.K.1,2
-
Мекемелер:
- Moscow State University
- Russian Research Centre Kurchatov Institute
- Ioffe Physical Technical Institute
- Шығарылым: Том 43, № 5 (2017)
- Беттер: 496-498
- Бөлім: Article
- URL: https://medbiosci.ru/1063-7850/article/view/204788
- DOI: https://doi.org/10.1134/S1063785017050261
- ID: 204788
Дәйексөз келтіру
Аннотация
We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.
Авторлар туралы
D. Zhigunov
Moscow State University
Email: phorsh@mail.ru
Ресей, Moscow, 119991
A. Il’in
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Ресей, Moscow, 119991; Moscow, 123182
P. Forsh
Moscow State University; Russian Research Centre Kurchatov Institute
Хат алмасуға жауапты Автор.
Email: phorsh@mail.ru
Ресей, Moscow, 119991; Moscow, 123182
A. Bobyl’
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Ресей, St. Petersburg, 194021
V. Verbitskii
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Ресей, St. Petersburg, 194021
E. Terukov
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Ресей, St. Petersburg, 194021
P. Kashkarov
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Ресей, Moscow, 119991; Moscow, 123182
Қосымша файлдар
