Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions

Аннотация

The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.