Enviar artigo por via de e-mail Luminescence of MoSe2: effect of temperature and pumping value
- Autores: Bisti V.E1, Brichkin A.S1, Golyshkov G.M1, Chernenko A.V1
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Afiliações:
- Osipyan Institute of Solid State Physics of the Russian Academy of Sciences
- Edição: Volume 89, Nº 2 (2025)
- Páginas: 211–214
- Seção: New Materials and Technologies for Security Systems
- URL: https://medbiosci.ru/0367-6765/article/view/296632
- DOI: https://doi.org/10.31857/S0367676525020106
- EDN: https://elibrary.ru/CXDOCC
- ID: 296632
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Resumo
The luminescence of excitons and trions in a MoSe monolayer encapsulated with hBN was studied under non-resonant photoexcitation of electron-hole pairs depending on the temperature and pumping intensity. The shift of luminescence lines and the redistribution of intensities can be explained by the influence of both the Fermi gas of free electrons and localized states of electrons caused by the presence of impurities in boron nitride hBN.
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Sobre autores
V. Bisti
Osipyan Institute of Solid State Physics of the Russian Academy of Sciences
Email: bisti@issp.ac.ru
Chernogolovka, Russia
A. Brichkin
Osipyan Institute of Solid State Physics of the Russian Academy of SciencesChernogolovka, Russia
G. Golyshkov
Osipyan Institute of Solid State Physics of the Russian Academy of SciencesChernogolovka, Russia
A. Chernenko
Osipyan Institute of Solid State Physics of the Russian Academy of SciencesChernogolovka, Russia
Bibliografia
- Wang G., Chernikov A., Glazov M.M. et al. // Rev. Mod. Phys. 2018. V. 90. Art. No. 021001.
- Durnev M.V., Glazov M.M. // Phys. Usp. 2018. V. 61. No. 9. P. 825.
- Glazov M.M. // J. Chem. Phys. 2020. Art. No. 153034703.
- Gillen R., Robertson J., Maultzsch J. // Phys. Stat. Sol. B. 2014. V. 251. P. 2620.
- Vokhmintsev A.S., Weinstein I.A. // J. Luminescence. 2021. V. 230. Art. No. 117623.
- Wang Z., Chiu Y.-H., Honz K. et al. // Nano Lett. 2018. V. 18. No. 1. P. 137.
- Efimkin D.K., MacDonald A.H. // Phys. Rev. B. 2017. V. 95. Art. No. 035417.
- Semina M.A., Suris R.A. // Phys. Usp. 2022. V. 65. No 2. P. 111.
- Fey C., Schmelcher P., Imamoglu A., Schmidt R. // Phys. Rev. B. 2020. V. 101. Art. No. 195417.
- Wagner K., Wietek E., Ziegler J.D. et al. // Phys. Rev. Lett. 2020. V. 125. Art. No. 267401.
- O’Donnell K.P., Chen X. // Appl. Phys. Lett. 1991. V. 58. No. 25. P. 2924.
- Ross J.S., Wu S., Yu H. et al. // Nature Commun. 2013. V. 4. Art. No. 1474.
- Голышков Г.М, Бричкин А.С., Черненко А.В. // Физ. и техн. полупровод. 2024. Т. 58. № 5. С. 233.
- Chernenko A.V., Brichkin A.S., Golyshkov G.M. // Bull. Russ. Acad. Sci. Phys. 2024. V. 88. No. 2. P. 209.
- Volkov O.V., Zhitomirski V.E., Kukushkin I. V. et al. // JETP Lett. 1997. V. 66. No. 11. P. 730.
- Volkov O.V., Kukushkin I.V., von Klitzing K., Eberl K. // JETP Lett. 1998. V. 68. No 3. P. 236.
- Zipfel J., Wagner K., Semina M.A. et al. // Phys. Rev. B. 2022. V. 105. Art. No. 075311.
- Onodera M., Isayama M., Taniguchi T. et al. // Carbon. 2020. V. 167. P. 785.
- Maity A., Grenadier S.J., Li J. et al. // Progr. Quantum Electron. 2021. V. 76. Art. No. 100302.
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