Properties of Interface Structures Based on Oxidized Lead Selenide

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Abstract

In this work, single-phase monocrystalline and thin-film samples of lead selenide were synthesized. Methods have been developed for the creation of surface oxidized lead selenide with a conductivity different from the base PbSe. Using oxidized lead selenide as an interface, Ag/Pb3OSeO3/PbSe heterostructures were made, demonstrating stable memristive characteristics. The obtained heterojunctions were investigated for the detection of resistive switching, the volt-ampere characteristics and the temperature dependence of the resistance of the structures were measured. By changing the external parameters: frequency, magnitude of the electric field voltage applied to the heterocontact, different metastable states are realized. Dynamic effects were studied, and the transition times from one metastable state to another were determined. Single crystal-based memristors were more stable than film structures, reproducible characteristics in single crystal-based memristors were observed for several months.

About the authors

N. A Tulina

Osippan Institute of Solid State Physics RAS

Author for correspondence.
Email: tulina@issp.ac.ru
Chernogolovka, Russia

A. N Rossolenko

Osippan Institute of Solid State Physics RAS

Email: tulina@issp.ac.ru
Chernogolovka, Russia

I. M Shmytko

Osippan Institute of Solid State Physics RAS

Email: tulina@issp.ac.ru
Chernogolovka, Russia

I. Y Borisenko

Institute of Problems of Microelectronics Technology and Especially Pure Materials RAS

Email: tulina@issp.ac.ru
Chernogolovka, Russia

D. N Borisenko

Osippan Institute of Solid State Physics RAS

Email: tulina@issp.ac.ru
Chernogolovka, Russia

N. N Kolesnikov

Osippan Institute of Solid State Physics RAS

Email: tulina@issp.ac.ru
Chernogolovka, Russia

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