Synthesis of Thin Films of NiO [111] on c-Al2O3 Substrates by Pulsed Laser Deposition

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Abstract

Thin NiO films with thickness from 40 to 170 nm were obtained by pulsed laser deposition on c-Al2O3 substrates using the second harmonic of YAG:Nd3+- laser for ablation of a metal Ni target in a vacuum chamber at an oxygen pressure of 7.5 mTorr and substrate temperature of 370°C. Using X-ray diffraction, all NiO films were shown to have high crystalline perfection and the [111] orientation. The surface roughness of the obtained films is in the range from 1.6 to 2.3 nm. It was found that with increase in NiO film thickness, the charge carrier concentration decreased and the specific resistance increased. According to measurements of the optical properties of the films, the band gap increases from 3.43 to 3.63 eV with decreasing thickness.

About the authors

D. S Gusev

National Research Centre "Kurchatov Institute"

Email: dagietl04@gmail.com
Moscow, Russia

L. S Parshina

National Research Centre "Kurchatov Institute"

Email: parshinaliubov@mail.ru
Moscow, Russia

N. V Potekhina

Lomonosov Moscow State University

Moscow, Russia

N. N Eliseev

National Research Centre "Kurchatov Institute"

Moscow, Russia

I. N Nikolaeva

Lomonosov Moscow State University

Moscow, Russia

R. I Voronin

National Research Centre "Kurchatov Institute"

Moscow, Russia

O. D Khramova

National Research Centre "Kurchatov Institute"

Moscow, Russia

O. A Novodvorsky

National Research Centre "Kurchatov Institute"

Moscow, Russia

A. P Shkurinov

National Research Centre "Kurchatov Institute"; Lomonosov Moscow State University

Moscow, Russia; Moscow, Russia

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