Effect of Hydrostatic Pressure on the Static Permittivity of Germanium
- Авторы: Musaev A.M.1
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Учреждения:
- Institute of Physics, Dagestan Scientific Center
- Выпуск: Том 52, № 1 (2018)
- Страницы: 31-33
- Раздел: Electronic Properties of Semiconductors
- URL: https://medbiosci.ru/1063-7826/article/view/202214
- DOI: https://doi.org/10.1134/S1063782618010141
- ID: 202214
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Аннотация
The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to P ≈ 7.4 GPa is studied experimentally. As the pressure is increased to P ≈ 4 GPa, the permittivity of Ge decreases by a factor of ~13 to ε = 1.22. As the pressure is increased further to P ≈ 7 GPa, a moderate increase in ε to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.
Об авторах
A. Musaev
Institute of Physics, Dagestan Scientific Center
Автор, ответственный за переписку.
Email: akhmed-musaev@yandex.ru
Россия, Makhachkala, 367003
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