Pesquisa

Edição
Título
Autores
Volume 52, Nº 16 (2018)
Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber
Muhammad Maqbool , Alruwaili A., Milinovic D., Khan T., Ali G., Ahmad I.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles
Stovpiaga E., Eurov D., Kurdyukov D., Smirnov A., Yagovkina M., Yakovlev D., Golubev V.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming
Chebanenko M., Zakharova N., Lobinsky A., Popkov V.
PDF
(Eng)
Volume 52, Nº 16 (2018)
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A., Mobtakeri S., Gür E., Elagoz S.
PDF
(Eng)
Volume 50, Nº 13 (2016)
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.
PDF
(Eng)
Volume 53, Nº 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
Volume 52, Nº 15 (2018)
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
Novak A., Novak V., Dedkova A., Gusev E.
PDF
(Eng)
Volume 50, Nº 5 (2016)
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko M., Kogotkov V., Leonidov A., Voronenkov V., Rebane Y., Zubrilov A., Gorbunov R., Latyshev P., Bochkareva N., Lelikov Y., Tarhin D., Smirnov A., Davydov V., Shreter Y.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates
Timoshnev S., Mizerov A., Lapushkin M., Kukushkin S., Bouravleuv A.
PDF
(Eng)
Volume 52, Nº 15 (2018)
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells
Vigdorovich E.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
Arteev D., Sakharov A., Lundin W., Zavarin E., Zakheim D., Tsatsulnikov A.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Mansurov V., Galitsyn Y., Malin T., Teys S., Fedosenko E., Kozhukhov A., Zhuravlev K., Cora I., Pécz B.
PDF
(Eng)
Volume 50, Nº 4 (2016)
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
Sharofidinov S., Nikolaev V., Smirnov A., Chikiryaka A., Nikitina I., Odnoblyudov M., Bugrov V., Romanov A.
PDF
(Eng)
Volume 53, Nº 11 (2019)
High-Voltage AlInGaN LED Chips
Markov L., Kukushkin M., Pavlyuchenko A., Smirnova I., Itkinson G., Osipov O.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut
Drozdov Y., Khrikin O., Yunin P.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B., Lobanov D., Krasil’nikova L., Bushuykin P., Yablonskiy A., Novikov A., Davydov V., Yunin P., Kalinnikov M., Skorohodov E., Krasil’nik Z.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Mizerov A., Arsentyev I., Leiste H., Rinke M.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A., Wolfson A., Mokhov E.
PDF
(Eng)
1 - 22 de 22 resultados
Dicas:
  • Palavras-chave são sensíveis a maiúsculas
  • Preposições e conjunções ingleses são ignoradas
  • Busca é feita por todos os palavras-chave (agente AND experimentador) por omissão
  • Use OR para pesquisar um termo exato, ex.: educação OR formação
  • Use parênteses para criar frases complexas, ex.: arquivo de ((revistas OR conferências) NOT teses)
  • Para pesquisar uma frase precisa use aspas duplas, ex.: "investigações científicas"
  • Exclua uma palavra utilizando o sinal - (hífen) ou operador NOT; ex.: concurso-de beleza ou concurso NOT de beleza
  • Use * como caractere-coringa, ex.: científic* recuperará as palavras "científico", "científicos", etc.