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Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A., Wolfson A., Mokhov E.
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Usov S., Mitrofanov M., Levitskii I., Evtikhiev V.
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A., Mobtakeri S., Gür E., Elagoz S.
Recombination in GaAs pin Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M., Evstropov V., Mintairov S., Salii R., Shvarts M., Kalyuzhnyy N.
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S., Vikhrova O., Zvonkov B., Zubkov S., Kriukov R., Nezhdanov A., Pavlov D., Pashen’kin I., Sushkov A.
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
Revin M., Kotkov A., Ivanov V., Rad’kov Y., Svinkov N., Artemov A., Gribov B.
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
Gorshkov A., Volkova N., Pavlov D., Usov Y., Istomin L., Levichev S.
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
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