Browse Title Index

Issue	Title	File
Vol 52, No 3 (2023)	Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data	(Rus)
Serov D.A., Khorin I.A.
Vol 53, No 6 (2024)	Simulation of Memristive Crossbar Array Electrical Behavior in Neuromorphic Electronic Blocks
Dudkin A.P., Ryndin E.A., Andreeva N.V.
Vol 53, No 3 (2024)	Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate	(Rus)
Masalsky N.V.
Vol 52, No 4 (2023)	Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric	(Rus)
Masalskii N.V.
Vol 52, No 1 (2023)	Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2	(Rus)
Asadov M.M., Mustafaeva S.N., Guseinova S.S., Lukichev V.F.
Vol 52, No 3 (2023)	Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery	(Rus)
Asadov M.M., Mammadova S.O., Huseynova S.S., Mustafaeva S.N., Lukichev V.F.
Vol 52, No 5 (2023)	Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials	(Rus)
Makhviladze T.M., Sarychev M.E.
Vol 52, No 6 (2023)	Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire	(Rus)
Pozdnyakov D.V., Borzdov A.V., Borzdov V.M.
Vol 52, No 4 (2023)	Single Event Displacement Effects in a VLSI	(Rus)
Chumakov A.I.
Vol 54, No 3 (2025)	STABILIZATION OF MEMRISTOR CELL STATES DURING INITIAL SWITCHING PROCESS AFTER FORMING
Fadeev A.V., Rudenko K.V.
Vol 53, No 2 (2024)	Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters	(Rus)
Lomov A.A., Seredin B.M., Martyushov S.Y., Tatarintsev A.A., Popov V.P., Malibashev A.V.
Vol 54, No 3 (2025)	Structure of thin titanium nitride films deposited by magnetron sputtering
Isaev A.G., Rogozhin A.E.
Vol 53, No 1 (2024)	Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses	(Rus)
Nefedov D.V., Shabunin N.O., Bratashov D.N.
Vol 54, No 1 (2025)	Study of deposition modes of Cu₂O films by RF magnetron sputtering for application in solar cell structures
Saenko A.V., Zheits V.V., Vakulov Z.E., Smirnov V.A.
Vol 52, No 1 (2023)	Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact	(Rus)
Kerimov E.A.
Vol 53, No 4 (2024)	Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO	(Rus)
Saenko A.V., Bilyk G.E., Smirnov V.A.
Vol 52, No 4 (2023)	Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation	(Rus)
Glushko A.A., Morozov S.A., Chistyakov M.G.
Vol 52, No 4 (2023)	Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation	(Rus)
Evstafieva M.V., Knyazev M.A., Korepanov V.I., Red’kin A.N., Roschupkin D.V., Yakimov E.E.
Vol 52, No 3 (2023)	Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates	(Rus)
Klimov E.A., Pushkarev S.S., Klochkov A.N., Mozhaeva M.O.
Vol 54, No 3 (2025)	Temperature characteristics of a simple current mirror on silicon high-voltage nLDMOS with a large drift area
Novoselov A.S., Gusev M.R., Masal’skii N.V.
Vol 53, No 5 (2024)	Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor
Novoselov А.S., Gusev М.R., Masalsky N.V.
Vol 53, No 2 (2024)	Temporary changes in current flow mechanisms in erbium-doped porous silicon	(Rus)
Khamzin E.K., Uslin D.A.
Vol 53, No 3 (2024)	The Effect оf Laser Radiation оn Functional Properties of MOS Structures	(Rus)
Rekhviashvili S.S., Gaev D.S.
Vol 52, No 5 (2023)	The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma	(Rus)
Efremov A.M., Smirnov S.A., Betelin V.B.
Vol 53, No 2 (2024)	The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits	(Rus)
Chumakov A.I.
Vol 53, No 3 (2024)	The structure and formation of non-volatile memory cells of Superflash	(Rus)
Abdullaev D.A., Bobrova E.V., Milovanov R.A.
Vol 53, No 3 (2024)	Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs	(Rus)
Kagadey V.A., Kodorova I.Y., Polyntsev E.S.
Vol 52, No 4 (2023)	Tomography of Detectors Taking Dead Time into Account	(Rus)
Bogdanov Y.I., Katamadze K.G., Borshchevskaya N.A., Avosopiants G.V., Bogdanova N.A., Kulik S.P., Lukichev V.F.
Vol 54, No 4 (2025)	Training of a Spiking Neural Network with a Consideration of Memristive Crossbar Array Characteristics
Dudkin A.P., Ryndin E.A., Andreeva N.V.
Vol 53, No 6 (2024)	Tunnel Breakdown Bipolar Transistor
Rekhviashvili S.S., Gaev D.S.
Vol 52, No 6 (2023)	ВНИМАНИЮ АВТОРОВ	(Rus)

Vol 52, No 1 (2023)	Искусственный интеллект никогда не заменит полностью человека	(Rus)
.
Vol 52, No 1 (2023)	Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур	(Rus)
., .
Vol 52, No 1 (2023)	Параметры газовой фазы и кинетика реактивно-ионного травления SiO₂ в плазме CF₄/C₄F₈/Ar/He	(Rus)
., .
Vol 52, No 1 (2023)	Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора	(Rus)
., ., .
Vol 52, No 1 (2023)	Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана	(Rus)
., ., ., .
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Vol 54, No 4 (2025)

Vol 54, No 4 (2025)

Browse Title Index